GaN-Based Light Emitting Diode and Fabrication Method thereof

摘要

PURPOSE: A GaN-based LED(Light Emitting Diode) and a fabricating method thereof are provided to distribute uniformly current by changing a structure of an electrode without using a transparent electrode. CONSTITUTION: An LED is formed by laminating sequentially a buffer layer(200), an n-type GaN membrane(300), a light emitting layer(400), a p-type GaN membrane(500), a p-type or an n-type electrode(600,700) on a surface of a sapphire substrate(100). The buffer layer(200) is used for heterogeneous junction for growing a GaN semiconductor on the surface of the sapphire substrate(100). The n-type and the p-type membranes(300,500) can be formed by AlGaN or InGaN as well as GaN. The n-type GaN membrane(300) has the first fingers and the second fingers. The first fingers are connected to each other. The second fingers are connected to each other. The second fingers are located at a place lower than the place of the first fingers.