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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Effect of filler content on the dielectric properties of anisotropic conductive adhesives materials for high-frequency flip-chip interconnection
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Effect of filler content on the dielectric properties of anisotropic conductive adhesives materials for high-frequency flip-chip interconnection

机译:填料含量对高频倒装片互连各向异性导电胶材料介电性能的影响

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摘要

The dielectric property of anisotropic conductive film (ACF) as an interconnect materials in the flip-chip joints is becoming important concern for device packaging solution at high-frequency due to low parasitic effect on the signal transfer. The effects of non-conductive, dielectric filler content on dielectric properties of ACA materials, like dielectric constant, loss factor and loss tangent, and conductivity at high-frequency were investigated. Frequency is dominating factor in determining dielectric constant, loss factor, and conductivity. However, the filler content is dominant only on dielectric constant, not on the loss factor, and conductivity at low-frequency range. The effect of low dielectric constant (low-k) filler addition on high-frequency behavior of ACF interconnection in flip-chip assembly was also investigated. Impedance parameters of low-k ACF with Ni filler and low-k SiO_2 filler extracted from measurement were compared with that of conventional ACF with only Ni filler. The resonant frequency of conventional ACF flip-chip interconnect was 13 GHz, while the resonant frequency of low-k ACF including low-k SiO_2 filler was found at 15 GHz. This difference is originated from capacitance decrease of polymer matrix between bump and substrate pad due to change in dielectric constant of polymer matrix, which was verified by measurement-based modeling. The high-frequency property of the conductive adhesive flip-chip joint, such as resonant frequency can be enhanced by low-k polymer matrix.
机译:倒装芯片接头中作为互连材料的各向异性导电膜(ACF)的介电特性由于对信号传输的寄生效应小,因此在高频下成为器件封装解决方案的重要问题。研究了非导电,介电填料含量对ACA材料介电性能的影响,如介电常数,损耗因子和损耗角正切以及高频电导率。频率是确定介电常数,损耗因子和电导率的主要因素。但是,填料含量仅取决于介电常数,而不取决于损耗因子和低频范围的电导率。还研究了低介电常数(low-k)填料添加对倒装芯片组装中ACF互连的高频行为的影响。将测量得到的含Ni填料的低k ACF和含k填料的低k SiO_2填料的阻抗参数与仅含Ni填料的传统ACF的阻抗参数进行了比较。常规ACF倒装芯片互连的谐振频率为13 GHz,而包含低k SiO_2填料的低k ACF的谐振频率为15 GHz。这种差异是由于聚合物基体的介电常数变化导致凸块和衬底焊盘之间的聚合物基体的电容减小而引起的,这已通过基于测量的建模得到了验证。可以通过低k聚合物基体增强导电粘合剂倒装芯片接头的高频特性,例如谐振频率。

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