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Review on material properties of IZO thin films useful as epi-n-TCOs in opto-electronic (SIS solar cells, polymeric LEDs) devices

机译:IZO薄膜的材料特性综述,可用于光电(SIS太阳能电池,聚合物LED)器件中的Epi-n-TCO

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Recently, materials were developed with lower resistivities than previously achieved and with optical properties superior to those of the present generation of TCOs. This has now been recognized internationally and novel materials are being investigated. Improving the mobility of the charge carriers lead to superior performance of both optical and transport phenomena. Development of low cost, high quality anti-reflective coatings is also a currently engaged field in opto-electronics industries. Our efforts on this point of view using indium zinc oxide (IZO)—a peculiar advanced Ⅲ-Ⅱ-Ⅵ compound semiconductor were presented in this review. Unique properties of the material leads it for too many commercial device applications irrespective of the methods of preparation. We hope that surely these data will be helpful either as a scientific or technical basis in the material science in semiconductor processing.
机译:近来,开发了具有比以前更低的电阻率并且具有优于当前的TCO的光学特性的光学特性的材料。现在,这已得到国际认可,正在研究新颖的材料。电荷载流子迁移率的提高导致光学现象和传输现象的优异性能。低成本,高品质的抗反射涂层的开发也是光电工业中当前的领域。本文就使用铟锌氧化物(IZO)(一种独特的先进Ⅲ-Ⅱ-Ⅵ型化合物半导体)的观点提出了自己的努力。无论制备方法如何,该材料的独特性能使其可用于太多商业设备。我们希望这些数据可以肯定地为半导体加工材料科学的科学或技术基础提供帮助。

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