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Studies on undoped SnO_2 thin film deposited by chemical reactive evaporation method

机译:化学反应蒸发法沉积未掺杂SnO_2薄膜的研究

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Transparent conducting undoped tin oxide thin film were prepared by chemical reactive evaporation method at various substrate temperature and post deposition heating for 30 min. Structural, electrical, optical and mechanical properties were studied. The film showed direct band gap in the range of 3.12-3.28 eV and the refractive index from 1.785 to 1.921. The minimum sheet resistance of ~243 Ω. was obtained at 450℃. All the film showed high adhesion with highest adhesion of the film deposited at 450℃. Post deposition heating increases the adhesion. The post deposition heated films showed decrease in transmittance and increase in band gap, refractive index and sheet resistance. The chemical reactive evaporation method is a very cost effective method for obtaining good quality undoped tin oxide thin films of lower resistance.
机译:通过化学反应蒸发法在各种衬底温度下制备透明导电无掺杂氧化锡薄膜,并在沉积后加热30分钟。研究了结构,电,光学和机械性能。该膜显示直接带隙在3.12-3.28 eV的范围内,折射率在1.785至1.921之间。最小薄层电阻约为243Ω。在450℃获得。所有膜均表现出高附着力,在450℃下沉积膜的附着力最高。沉积后加热可增加附着力。沉积后加热的膜显示出透射率降低并且带隙,折射率和薄层电阻增加。化学反应蒸发法是一种非常经济有效的方法,可用于获得高质量,低电阻的未掺杂氧化锡薄膜。

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