Photoluminescence of undoped and Ce-doped SnO_2 thin films deposited by sol-gel-dip-coating method

摘要

The undoped and Ce-doped SnO_2 thin films synthesized by a simple sol-gel-dip-coating method on glass substrates were investigated by means of X-ray diffractometer, visible spectrophotometer and photo-luminescence (PL) spectroscopy. The samples were polycrystalline thin films with rutile structure of undoped SnO_2. A violet PL peak was observed in undoped SnO_2 at room temperatures, while a blue PL peak appeared only after introducing Ce~(3+) ions into the SnO_2 host. The effects of Ce doping concentration and heat-treatment temperature on PL of the films were further studied, and the luminescence mechanism was also discussed.