cadmium compounds; optical films; II-VI semiconductors; semiconductor thin films; semiconductor growth; liquid phase deposition; indium; semiconductor doping; annealing; secondary ion mass spectra; wide band gap semiconductors; scanning electron microscopy; surface topography; impurity distribution; atomic force microscopy; cadmium sulfide thin films; chemical bath deposition; growth dependant properties; in-situ indium doping; post deposition annealing; secondary ion mass spectroscopy; environmental scanning electron microscopy; surface topography; deposition temperature; indium dopant distribution; colloidal particulate deposition; atomic force microscopy; charge contrast imaging; CdS; CdS:In;
机译:前体溶液老化喷雾的结构,光学,电气和催化性能未掺杂,Zn掺杂和Ag掺杂的CDO薄膜
机译:化学浴沉积CdS薄膜的原位硼掺杂
机译:Zn,Al和Sn掺杂和未掺杂CdS薄膜通过化学浴沉积的光学和光电探测器性能比较
机译:对未掺杂和原位掺杂化学沉积CDS薄膜的生长依赖性的研究
机译:化学气相沉积硼掺杂多晶金刚石薄膜在硅和蓝宝石上的生长:生长,掺杂,金属化和表征
机译:通过浸涂和超声波喷雾热解方法沉积的未掺杂和镍掺杂的氧化锌薄膜用于丙烷和一氧化碳传感应用
机译:用简化喷涂技术制备未掺杂和纳米Zn掺杂Cds薄膜的结构,形态,光学和电学性质的研究