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A study of the growth dependant properties of undoped and in-situ doped chemically deposited CdS thin films

机译:未掺杂和原位掺杂化学沉积CdS薄膜的生长依赖性研究

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Cadmium sulfide thin films have been produced by the chemical bath deposition method in order to study the growth dependant properties and composition of the CdS. The specific categories of interest include deposition temperature, in-situ indium doping, and post deposition annealing. The films were subjected to a number of analysis techniques including atomic force microscopy, secondary ion mass spectroscopy, and environmental scanning electron microscopy with charge contrast imaging. Results from this analysis reveal many interesting details concerning the surface topography, the effect of deposition temperature on film composition, and the distribution of indium dopant throughout the film. After annealing in an air atmosphere, nodule like structures have appeared, the indium dopant was found to have an inhomogeneous distribution through the depth of the film, and colloidal particulate deposition was found to increase at higher deposition temperatures.
机译:为了研究CdS的生长依赖性特性和组成,已经通过化学浴沉积方法制备了硫化镉薄膜。关注的特定类别包括沉积温度,原位铟掺杂和沉积后退火。薄膜经历了许多分析技术,包括原子力显微镜,二次离子质谱和带电荷对比成像的环境扫描电子显微镜。该分析的结果揭示了许多有趣的细节,涉及表面形貌,沉积温度对薄膜组成的影响以及铟掺杂剂在整个薄膜中的分布。在空气气氛中退火后,出现了结节状结构,发现铟掺杂剂在薄膜的整个深度上具有不均匀的分布,并且发现在较高的沉积温度下胶体颗粒沉积会增加。

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