机译:过渡金属掺杂剂附近的半导电碳化硼局部电子结构的见解
Dept. of Physics, University of Nebraska at Omaha, Omaha, NE 68182-0266, United States State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, PR China;
rnState Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, PR China;
rnDepartment of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, Theodore Jorgensen Hall, University of Nebraska, Lincoln,NE 68588-0299, United States;
rnDept. of Physics, University of Nebraska at Omaha, Omaha, NE 68182-0266, United States Department of Physics, University of Nebraska at Omaha, 60th and Dodge Streets, Omaha, NE 68182-0266, United States;
rnDepartment of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, Theodore Jorgensen Hall, University of Nebraska, Lincoln,NE 68588-0299, United States;
transition metal doping; semiconducting boron carbides; local magnetic order in a semiconductor; matrix; band gaps; spin tunnel junctions;
机译:过渡金属掺杂碳化硼的局部结构
机译:软X射线发射和吸收光谱法对掺硼金刚石中半导体和金属态之间电子结构转变的元素选择观察
机译:通过电子结构计算分析具有离散线性M-C-M单元(M = Cr,Fe,Re)的过渡金属碳化物和过渡金属硅化物碳化物中的键合和d电子数
机译:铬掺杂半导体碳化硼的局部结构和Ⅰ-Ⅴ特性
机译:Closo-Carbane的光致碎裂过程和过渡金属掺杂的半导体碳化硼薄膜的局部结构。
机译:通过将过渡金属催化剂固定在碳化物/碳核-壳结构的壳内来改善对碳化物衍生碳微结构的控制
机译:过渡金属掺杂的半导体碳化硼的局部结构