Effects of laser-induced recovery process on conductive property of SnO_2:F thin films

摘要

In this study, we developed a laser annealing process to enhance the electrical properties of SnO_2 :F (FTO) films. It is already known that in contrast to indium oxides or zinc oxides, the carrier mobility of FTO films is relatively lower. Thus, improving the mobility is a direct way to enhance the conductivity of FTO films. Furthermore, improving the crystal quality of the thin films is in turn a direct way to enhance the mobility effectively. Contrary to the high working temperatures of traditional annealing processes, the laser annealing process, with its focusing character, enables us to modify the crystal quality of oxide films on substrates with low-melting points. Using a self-built laser system, which consists of a Nd:YAG solid-state laser with a wavelength of 1064nm and a beam shaper lens, we carried out a series of experiments to achieve the optimal laser annealing process. Hall, SEM, and XRD measurements were used to characterize the opto-electrical as well as the structural properties. As experimental results show, the tin oxide crystallites recovered well during the laser annealing process. By using a suitable beam profile and a proper laser intensity, the film resistivity was reduced from 7.19 ± 0.55×10~(-3)3 Ω cm to 6.70 ± 0.20 ×10~(-3)Ω cm while the carrier mobility was enhanced from 11.18 ±0.29cm~2/Vs to 11.71 ±0.34cm~2/Vs.