Electrical and Structural Properties of Ta-doped SnO_2 Transparent Conductive Thin Films by Pulsed Laser Deposition

摘要

We investigated electrical and structural properties of Ta-doped SnO_2 (TTO) films on anatase TiO_2 seed layers with various growth parameters of pulsed laser deposition. We found that anatase TiO_2 seed layers induced pseudo-epitaxial (100) growth of TTO films with enhanced mobility (μ) in a wide range of growth parameters. The highest μ of 83 cm~2V~(-1)s~(-1) [resistivity (ρ) of 2.8 × 10~(-4) Ωcm] and the lowest ρ of 1.8 × 10~(-4) Ωcm (μ of 60 cm~2V~(-1)s~(-1)) were obtained at a substrate temperature of 600 °C. Amorphization and (101)-preferred growth competed with (100) growth on the TiO_2 seed layer at low temperatures. Introducing sufficient process oxygen suppressed such unwanted film growth, resulting in improved transport properties.