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Method for growing transparent conductive GaInO.sub.3 films by pulsed laser deposition

机译:通过脉冲激光沉积生长透明导电GaInO.sub.3膜的方法

摘要

Applicants have discovered that films of conductively doped GaInO.sub. 3 grown on substrates by pulsed laser deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from room temperature to 350° C. in an ambient containing oxygen at partial pressure in the range 0.1 mTorr to 100 mTorr. The preferred laser source was an excimer laser operating in the deep ultraviolet.
机译:申请人已经发现导电掺杂的GaInO.sub的膜。通过脉冲激光沉积在基板上生长的3,其电导率可与传统的宽带隙透明导体媲美,同时表现出优异的透光率,特别是在可见光谱的绿色和蓝色波长区域。在分压为0.1mTorr至100mTorr的范围内的含氧的环境中,基板温度为室温至350℃。优选的激光源是在深紫外线下工作的准分子激光器。

著录项

  • 公开/公告号US5538767A

    专利类型

  • 公开/公告日1996-07-23

    原文格式PDF

  • 申请/专利权人 AT&T CORP.;

    申请/专利号US19950377546

  • 申请日1995-01-24

  • 分类号C23C14/28;

  • 国家 US

  • 入库时间 2022-08-22 03:38:16

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