Institute of Electronic Engineering and Department of Optoelectronic Engineering System, Minghsin University of Science and Technology, Hsinchu 30401 Taiwan;
Institute of Electronic Engineering and Department of Optoelectronic Engineering System, Minghsin University of Science and Technology, Hsinchu 30401 Taiwan;
Institute of Electronic Engineering and Department of Optoelectronic Engineering System, Minghsin University of Science and Technology, Hsinchu 30401 Taiwan;
Institute of Electronic Engineering and Department of Optoelectronic Engineering System, Minghsin University of Science and Technology, Hsinchu 30401 Taiwan;
Institute of Physics, Academia Sinica, Nankang 115 Taipei, Taiwan;
Institute of Physics, Academia Sinica, Nankang 115 Taipei, Taiwan;
机译:制备条件对ZnO:Ge透明导电薄膜的光电性能的影响,由脉冲激光沉积制造
机译:脉冲激光沉积制备透明导电掺铝ZnO薄膜
机译:通过脉冲激光沉积在玻璃基板上沉积透明的ZnO导电薄膜
机译:脉冲激光沉积法制备透明导电ZnO:Nb2O5薄膜
机译:通过脉冲激光沉积开发基于ZnO的薄膜晶体管和掺磷的ZnO和(Zn,Mg)O。
机译:ZnF2掺杂的ZnO靶在不同溅射衬底温度下沉积F掺杂的ZnO透明薄膜
机译:脉冲激光沉积(pLD)生长透明导电ZnO薄膜的结构与性能