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Relationship and mechanism between microstructure and property of C70250 copper alloy strip prepared by temperature controlled mold continuous casting

机译:温控结晶器连铸C70250铜合金带材组织与性能的关系及机理

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Temperature controlled mold continuous casting (TCMCC) technology was used to fabricate the C70250 copper alloy strips. The influences of solidification microstructure on mechanical and electrical properties of C70250 copper alloys were systematically studied, and the relevant influencing mechanism was discussed. The results show that the microstructure of TCMCC C70250 copper alloy has a large number of fine dispersed Ni2Si phases, small angle grain boundaries and columnar grains with strong [0011 orientation. The tensile strength, elongation and electrical conductivity of the C70250 copper alloy are 328 MPa, 40.4% and 24.3% IACS, respectively, which are obviously higher than the properties of the C70250 copper alloys prepared by conventional cold mold casting methods. The tensile strength of TCMCC C70250 copper alloy strip significantly increases due to the dislocation plugging inside the grains, which caused by strong pinning effect of Ni2Si phases during room temperature tensile. Straight small angle grain boundaries and columnar grains with strong [001] orientation significantly reduce the hindering effect of grain boundaries on dislocations. The deformation between and within grains is more uniform, and it is not easy to form high strain concentration, which leads to the increase of plastic deformation ability. The scattering effects of solute atoms and transverse grain boundaries on electrons are significantly reduced due to the precipitated Ni, Si atoms and the high orientation of columnar grain structure, which contributes to the improvement of the electrical conductivity.
机译:使用温控结晶器连续铸造(TCMCC)技术制造C70250铜合金带。系统研究了凝固组织对C70250铜合金力学性能和电性能的影响,并探讨了其影响机理。结果表明,TCMCC C70250铜合金的显微组织具有大量细分散的Ni2Si相,小角度晶界和具有强[0011取向]的柱状晶粒。 C70250铜合金的拉伸强度,伸长率和电导率分别为328 MPa,40.4%和24.3%IACS,明显高于常规冷模铸造方法制备的C70250铜合金的性能。 TCMCC C70250铜合金带材的抗拉强度由于晶粒内部位错堵塞而显着增加,这是由于室温拉伸过程中Ni2Si相的强钉扎效应引起的。直的小角度晶界和具有强[001]取向的柱状晶粒显着降低了晶界对位错的阻碍作用。晶粒间和晶粒内的变形更加均匀,不易形成高应变集中,从而导致塑性变形能力增强。由于析出的Ni,Si原子和柱状晶粒结构的高取向,溶质原子和横向晶界对电子的散射效应显着降低,这有助于提高导电性。

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