Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr0.52Ti0.48)O-3 thin films on all-oxide layers buffered silicon

摘要

Epitaxial ferroelectric Pb(Zro(0.52)Ti(0.48))O-3 (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO3 (and PZT/LaNiO3) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO3 (and PZT/LaNiO3) were fabricated with an extra CeO2 buffer layer (CeO2/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33,(f) coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31,(f) coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between grains) of the former films. (C) 2015 Elsevier Ltd. All rights reserved.