Structure, morphology and photoluminescence attributes of Al/Ga co-doped ZnO nanofilms: Role of annealing time

摘要

The influence of annealing time on the structure, morphology and photoluminescence behavior (AI)/(Ga) co-doped ZnO (AGZO). nanofilms are grown on the p-type Si(100) substrate via combined sol-gel, spin coating annealed in air at 500 degrees C at 0-3 h. Samples are characterized using XRD, TEM, AFM, FESEM, EDX, (PL) and Raman measurements. XRD pattern confirmed the growth of highly poly-crystalline hexagonal wurtzite structure of ZnO with preferred orientation along (101) direction. At (3 h) is found to cause lattice contraction and strain relaxation. TEM images revealed the nucleation of nanoparticles (NPs) and SAED pattern identified the lattice parameter. Raman spectra of AGZO exhibited optical and acoustic modes. FESEM displayed an increase in the particles size and number of nanoflakes with increasing annealing time. EDX detected right elemental traces. PL revealed an intense emission peak centered at 3.23 eV, which is continuously shifted toward lower frequency with increasing time.