Reactive partially ionized beam deposition of AlN thin films

摘要

Aluminum nitride films were synthesized on Si(111) wafer and quartz by the reactive partially ionized beam (RPIB) deposition technique. Under specific experimental conditions, polycrystalline and preferential crystalline AlN films of hexagonal structure were obtained by this method. The correlation between experimental parameters and the resulting structure as well as the stoichiometry of the AlN film are discussed.