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Thin film deposition methods and thin film deposition for molecular beam source cell

机译:分子束源电池的薄膜沉积方法和薄膜沉积

摘要

PROBLEM TO BE SOLVED: To uniformly deposit an organic electroluminescence material on a substrate with a large area, and at the same time, to prevent the occurrence of defects of a film caused by a spitting phenomenon.;SOLUTION: A plurality of molecule emission ports 4, 4a, 4b, and 4c, which emit molecules of film forming materials a, b, and c evaporated from crucibles 5, 5a, 5b, and 5c toward the surface of a solid on which the film is formed are provided by arranging in one row or in a plurality of rows. Also, the molecular of the film forming materials a, b, and c generated at the crucibles 5, 5a, 5b, and 5c are emitted toward the surface of the solid from the molecule emission ports 4, 4a, 4b, and 4c through buffer chambers 9, 10, 9a, 10a, 9b, 10b, 9c, and 10c by providing the buffer chambers 9, 10, 9a, 10a, 9b, 10b, 9c, and 10c between the crucibles 5, 5a, 5b, and 5c and the molecule emission ports 4, 4a, 4b, and 4c.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:将有机电致发光材料均匀地沉积在大面积的基板上,同时防止由溅射现象引起的膜缺陷的发生。解决方案:多个分子发射口通过布置在其中形成有从坩埚5、5a,5b和5c蒸发的成膜材料a,b和c的分子朝向形成膜的固体的表面,发射图4、4a,4b和4c的分子。一排或多排。而且,在坩埚5、5a,5b和5c处产生的成膜材料a,b和c的分子通过缓冲液从分子发射口4、4a,4b和4c朝着固体表面发射。通过在坩埚5、5a,5b和5c之间提供缓冲腔9、10、9a,10a,9b,10b,9c和10c,在腔9、10、9a,10a,9b,10b,9c和10c之间分子发射口4、4a,4b和4c;版权:(C)2004,JPO

著录项

  • 公开/公告号JP3754380B2

    专利类型

  • 公开/公告日2006-03-08

    原文格式PDF

  • 申请/专利号JP20020044211

  • 发明设计人 高橋 弘;

    申请日2002-02-21

  • 分类号C23C14/24;H05B33/10;H01L51/50;

  • 国家 JP

  • 入库时间 2022-08-21 21:48:43

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