Hot-filament-enhanced chemical vapor deposition of silicon oxide films

摘要

Silicon oxide films were deposited on crystalline gallium arsenide substrates by chemical vapor deposition (CVD) using a solid source of silicon dioxide and atomic hydrogen as reactant. Infrared (IR) absorption spectra of the samples showed the characteristic bands of Si-O-Si group, typical of SiO_2, and SiH group, but could not detect any band corresponding to OH or SiOH groups.