Composite substrate LiGaO_2 (001)//β-Ga_2O_3 (100) fabricated by vapor transport equilibration

摘要

Highly (001) orientation LiGaO_2 layers have been successfully fabricated on (100) β-Ga_2O_3 surface by vapor transport equilibration (VTE) technique. The temperature is very important for the VTE treatment. At low temperature (800℃), LiGaO_2 layers are textured. As the temperature was raised to 1100℃ the layer becomes highly oriented in the [100] direction. It shows that the best temperature for VTE treatment is 1100℃. This technique is promising to fabricate small lattice mismatch composite substrate of LiGaO_2 (001)//β-Ga_2O_3 (100) for GaN films.