Growth of nonpolar m-plane GaN epitaxial film on a lattice-matched (100) β-LiGaO_2 substrate by chemical vapor deposition

摘要

We report the growth of nonpolar GaN epitaxial films on nearly lattice-matched LiGaO_2 substrate by a chemical vapor deposition (CVD) method. The structural, morphological and optical properties of GaN films were investigated by X-ray diffraction, scanning electron microscopy, transmission electron microscopy (TEM), atomic force microscopy, and photoluminescence (PL) measurements. We found that growth temperature plays an important role in the preparation of pure m-plane films by CVD method. Pure m-plane GaN was achieved by optimized growth condition. Epitaxial relationship was revealed by TEM study. The PL spectrum at room temperature has a strong near-band-edge emission at 3.41 eV and a weak yellow luminescence band.