Synthesis of GaN nanorods by ammoniating Ga_2O_3 films on TiO_2 (rutile) layer deposited on Si(111) substrates

摘要

GaN nanorods have been synthesized by ammoniating Ga_2O_3 films on a TiO_2 middle layer deposited on Si(111) substrates. The products were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformed infrared spectra (FTIR) and high-resolution transmission electron microscopy (HRTEM). The XRD analysis indicates that the crystallization of GaN film fabricated on TIO_2 middle layer is rather excellent. The FTIR, SEM and HRTEM demonstrate that these nanorods are hexagonal GaN and possess a rough morphology with a diameter ranging from 200 nm to 500 nm and a length less than 10 urn, the growth mechanism of crystalline GaN nanorods is discussed briefly.