Transmission electron microscopy study of defect-selective etched (010) ScN crystals

摘要

The origin of etch pits, formed in (010) scandium nitride single crystals etched in molten potassium hydroxide KOH, is reported. Transmission electron microscopy (TEM) with weak beam condition and large area convergent beam electron diffraction technique were used to identify the nature of dislocations associated with etch pits. The top edge of the etch pits was a square inverted pyramid with the bottom point deviating from the center. TEM investigation demonstrated that a mixed dislocation terminated at the bottom of each etch pit. The Burgers vector of the mixed dislocation is 1/2[011] and the vector of the dislocation line is [191].