Optical And Electrical Properties Of Indium Tin Oxide Thin Films Sputter-deposited In Working Gas Containing Hydrogen Without Heat Treatments

摘要

Polycrystalline thin films of indium tin oxide sputter-deposited in the working gas containing hydrogen of 0.3-1.5% exhibited transmittance of ≥ 80% for visible lights and blue-shift of ≥ 0.1 eV in the optical absorption energy. The film deposited in the gas containing hydrogen of 1% demonstrated almost flat temperature-dependent resistivity and the lowest resistivity of ≈ 1.5 ×10~(-4) Ω cm at room temperature. The carrier density showed an inverse V-shaped behavior with the maximum at the hydrogen concentration of 1%. The mobility stayed at almost constant below the hydrogen concentration of 1% and dropped rather rapidly above 1%.