Dielectric enhancement of BaTi0_3/BaSrTi0_3/SrTi0_3 multilayer thin films deposited on Pt/Ti/SiO_2/Si substrates by sol-gel method

摘要

Polycrystalline BaTi0_3/Ba_(0.6)Sr_(0.4)TiO_3/SrTiO_3 (BT/BST/ST) multilayer thin films with different periodicities have been deposited on Pt/ri/SiO2/Si substrates by using a sol-gel method. The multilayer thin films were crack free, compact and crystallized in a perovskite structure. The dielectric constant of the multilayer thin films was significantly increased and the dielectric loss was almost the same as those of uniform BT, ST and BST thin films. The dielectric constant increased with increasing stacking periodicity as the thickness of each individual layer decreased. The multilayer thin films showed excellent dielectric properties and can be promisingly used for the dielectric layer of silicon-based embedded capacitors in package substrate.