机译:使用硅模板上的CVD模板对厚的独立式3C-SiC进行升华生长
Department of Physics, Chemistry and Biology, Linkoping University, S-58183 Linkoping, Sweden,Materials for Electronics and Energy Technology, University Erlangen-Nuremberg, Martensstrasse 7, D-91058 Erlangen, Germany;
Department of Physics, Chemistry and Biology, Linkoping University, S-58183 Linkoping, Sweden;
Department of Physics, Chemistry and Biology, Linkoping University, S-58183 Linkoping, Sweden;
Leibniz Institute for Crystal Growth, Max-Bom-Strasse 2, D-12489 Berlin, Germany;
Department of Physics, Chemistry and Biology, Linkoping University, S-58183 Linkoping, Sweden;
Materials for Electronics and Energy Technology, University Erlangen-Nuremberg, Martensstrasse 7, D-91058 Erlangen, Germany;
Department of Physics, Chemistry and Biology, Linkoping University, S-58183 Linkoping, Sweden;
crystal growth; defects; physical vapor deposition; semiconductors; epitaxial growth; thick films;
机译:使用硅上的3C-SiC模板通过升华外延生长的独立3C-SiC
机译:CVD异质外延晶种层上的3C-SiC块体升华生长
机译:使用CVD生长的3C-SiC种子层通过VLS传输在硅衬底上外延生长3C-SiC
机译:使用硅上的3C-SiC模板通过升华外延生长的独立式3C-SiC
机译:电子应用硅上外延3C-SiC薄膜的生长和表征。
机译:倒置硅金字塔图案衬底上的3C-SiC生长
机译:使用硅模板上的CVD模板对厚的独立式3C-SiC进行升华生长