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Realization of non c-axis oriented ZnO thin films on quartz through Mn-Li co-doping

机译：通过Mn-Li共掺杂在石英上实现非c轴取向ZnO薄膜

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摘要

Non c-axis oriented ZnO thin films were grown on quartz substrates via pulsed laser deposition (PLD) through Mn-Li co-doping. Both oxygen pressure (PO_2) and growth temperature (T_s) are revealed to have significant effects on the structural properties of the Zn(Mn, Li)O (ZMLO) films. The self-textured film with predominant (1011) preferred orientation (PO) is achieved. In addition, using the ZMLO as a buffer layer, the growth of undoped pure ZnO with successive orientation characteristic is realized as well. Emission study was performed for the ZnO layer showing strong near-band-edge emission with minor deep level emission, indicating high optical quality of the ZnO thin film.
机译：通过Mn-Li共掺杂通过脉冲激光沉积（PLD）在石英基板上生长非c轴取向的ZnO薄膜。氧压（PO_2）和生长温度（T_s）均对Zn（Mn，Li）O（ZMLO）膜的结构性能具有重要影响。获得具有主要（1011）优选取向（PO）的自织构化膜。另外，使用ZMLO作为缓冲层，还实现了具有连续取向特性的未掺杂纯ZnO的生长。对ZnO层进行了发射研究，显示出强的近带边缘发射和较小的深能级发射，表明ZnO薄膜的光学质量很高。

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  • 来源
    《Materials Letters》 |2013年第1期|153-155|共3页
  • 作者

    Bin Lu; Tingting Zhou; Mengjie Ma; Chunli Ye; Xinhua Pan; Jianguo Lu; Zhizhen Ye;

  • 作者单位

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Mn-Li codoping; Semiconductors; Buffer layer; Thin films; Crystal growth; ZnO;

    机译：Mn-Li共掺杂;半导体;缓冲层;薄膜;晶体生长;氧化锌;

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