Preferred C-axis Oriented Photoluminescent ZnO Thin Films Prepared by RF Magnetron Sputtering

摘要

Undoped ZnO thin films were prepared by RF magnetron sputtering at 300°C. High value of optical transparency, distinct (002) preferential crystallographic orientation, high growth rate, good electrical conductivity and surface roughness are obtained at 200 W of RF power. XRD and Raman studies reveal good crystallinity with c-axis orientation. The Photoluminescence spectrum shows UV, violet, blue and green emission from the material.