Delafossite-CuFeO_2 thin films prepared by atmospheric pressure plasma annealing

摘要

This study reports the use of atmospheric pressure plasma annealing to prepare the delafossite-CuFeO_2 thin films. The pure delafossite-CuFeO_2 phase was formed using atmospheric pressure plasma annealing at 5% O_2, which had a large agglomerate morphology. The Cu-2p_(3/2) and the Fe-2p_(3/2) photoelectron peaks in the delafossite-CuFeO_2 thin films were centered at 932.8 eV and 710.2 eV, indicating the chemical state of Cu and Fe were +1 and +3. The delafossite-CuFeO_2 thin films had an optical bandgap of 3.1 eV. The electrical conductivity of the thin films was 0.67 ± 0.02 S cm~(-1) with the carrier concentration of (2.56 ± 1.24) × 10~(18) cm~(-3). Hence, an atmospheric pressure plasma annealing offers an effective tool and a feasible method for preparing the delafossite-CuFeO_2 thin films.