Structural characterizations of GaN nanowires grown on Si (111) substrates by thermal evaporation

摘要

In this work wurtzite GaN nanowires (NWs) on silicon (111) substrates were grown, using commercial GaN powder by thermal evaporation in an atmosphere of argon (Ar) gas. Structural and optical characterizations were performed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution X-ray diffraction (HR-XRD) and photoluminescence (PL) spectroscopy. The obtained results of GaN NWs indicated that the NWs on Si (111) substrates are of good quality singlecrystal hexagonal GaN due to the small lattice mismatch between the NWs and substrates compared to the growth of GaN NWs on other substrates.