Structural and magnetic properties of Er-implanted GaN films

摘要

Ferromagnetic GaN:Er films have been successfully fabricated by implanting Er~+ into unintentionallydoped GaN, and subsequent rapid thermal annealing at 800℃. No secondary phase was observed within the sensitivity of XRD analysis. HRXRD results show a clear broad feature and a satellite peak on the left side of GaN:Er (0002) peak. The reduction of full width at half maximum of XRD rocking curves suggested the improvement of crystal quality through 800℃ annealing. Clear room temperature ferromagnetism and magnetic anisotropy have been observed. The possible origin of ferromagnetism was discussed briefly.