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Structural and optical behavior of thermally stable co-doped ZnS nanocrystallites

机译:热稳定共掺杂ZnS纳米微晶的结构和光学行为

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摘要

The structural, optical and thermal behavior of ZnS nanocrystals co-doped with Nit-' and Mn2 isoelectronic impurities are reported. Simple and more productive chemical co-precipitation method is used to synthesis the co-doped semiconductor nanoparticles. X-ray diffraction (XRD) and High resolution transmission electron microscope (HRTEM/SAED) results indicated that co-doped ZnS nanoparticles with a polycrystalline zinc blend structure were homogeneously well dispersed in the polymer matrix. UV-vis spectra confirm the strong quantum confinement effect in the co-doped samples. Photoluminescence (PL) spectra revealed three fold increase in the emission intensity at optimal co-dopant concentration and further increase leads to a quenching effect by the dopants. The thermal stability of the composite semiconductor was determined by thermogravimetric analysis. (C) 2016 Elsevier B.V. All rights reserved.
机译:报道了共掺杂有Nit-和Mn2等电子杂质的ZnS纳米晶体的结构,光学和热行为。使用简单且生产效率更高的化学共沉淀方法来合成共掺杂半导体纳米颗粒。 X射线衍射(XRD)和高分辨率透射电子显微镜(HRTEM / SAED)结果表明,具有多晶锌共混物结构的共掺杂ZnS纳米颗粒均匀均匀地分散在聚合物基质中。紫外可见光谱证实了共掺杂样品中的强量子限制效应。光致发光(PL)光谱显示,在最佳共掺杂物浓度下,发射强度增加了三倍,并且进一步增加导致了掺杂剂的猝灭作用。通过热重分析确定复合半导体的热稳定性。 (C)2016 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Materials Letters 》 |2016年第15期| 5-8| 共4页
  • 作者单位

    Bharathiar Univ, Ctr Res & Dev, Coimbatore 641046, Tamil Nadu, India;

    Surya Grp Inst Vikiravandi, Sch Engn & Technol, Dept Phys, Vikiravandi 605652, Tamil Nadu, India;

    St Josephs Coll Engn, Dept Phys, Chennai 600119, Tamil Nadu, India;

    Sir Theagaraya Coll, Dept Phys, Chennai 600021, Tamil Nadu, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Semiconductors; Optical materials and properties; Scanning tunneling microscopy;

    机译:半导体;光学材料和特性;扫描隧道显微镜;

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