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Size-dependent torsional deformation of silicon nanowires

机译:硅纳米线的尺寸依赖性扭转变形

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The effect of size on the torsional deformation of [1 1 0]-oriented silicon nanowires is examined via molecular dynamics simulations. The plastic deformation mechanism of silicon nanowires depends on the nanowire diameter. Sub-5.7-nm-diameter silicon nanowires yield by means of a crystal-to-amorphous transition, which nucleates at the outer surface and propagates along the cross-section of the wires. On the other hand, perfect dislocations nucleate at the outer surface of wires whose diameter equals or exceeds 7.7 nm, initiating plastic deformation. These dislocations have a Burgers vector of 1/2 110 and slip along the {1 1 1} planes. These findings may enhance our understanding of plasticity of silicon nanowires. (C) 2017 Elsevier B.V. All rights reserved.
机译:通过分子动力学模拟研究了尺寸对[1 1 0]取向硅纳米线扭转变形的影响。硅纳米线的塑性变形机制取决于纳米线的直径。直径小于5.7 nm的硅纳米线是通过晶体到非晶态的转变而产生的,该转变在外表面成核并沿导线的横截面传播。另一方面,完美的位错在直径等于或大于7.7 nm的导线外表面成核,从而引发塑性变形。这些位错的Burgers向量为1/2 <110>,并沿着{1 1 1}平面滑动。这些发现可能会增强我们对硅纳米线可塑性的理解。 (C)2017 Elsevier B.V.保留所有权利。

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