机译:退火对等离子体增强原子层沉积Ga_2O_3薄膜性能的影响
Beijing Univ Technol, Dept Informat, Optoelect Technol Lab, Beijing 100022, Peoples R China|Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China;
Beijing Univ Technol, Dept Informat, Optoelect Technol Lab, Beijing 100022, Peoples R China;
Beijing Univ Technol, Dept Informat, Optoelect Technol Lab, Beijing 100022, Peoples R China;
Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China;
Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China;
Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China|Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Nanjing 210094, Jiangsu, Peoples R China;
Beijing Univ Technol, Dept Informat, Optoelect Technol Lab, Beijing 100022, Peoples R China|Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China;
Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China;
Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China;
Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China;
Epitaxial growth; Annealing; Ga2O3; XRD; Thin films;
机译:热退火对等离子体增强原子层沉积沉积铝氧化铝薄膜电介质,钝化和pH检测性能的影响
机译:通过原子层沉积和等离子体增强原子层沉积沉积的Ta_2O_5薄膜的纳米化学,纳米结构和电学性质
机译:等离子体增强原子层沉积HfO_2薄膜的热力学性质和界面层特性
机译:通过衬底偏置控制通过等离子体增强原子层沉积法沉积的Al2O3薄膜的机械,结构和光学性质
机译:用于多功能薄膜电子设备的等离子增强原子层沉积氧化锌。
机译:快速热退火和不同氧化剂对原子层沉积LaxAlyO纳米层压膜性能的影响
机译:沉积后退火对通过等离子体增强原子层沉积在p-Si上生长的β-Ga2O3薄膜的电学性能的影响
机译:通过等离子体增强化学气相沉积沉积的无定形碳膜作为平面化层。