Electrical properties of GeSeTl thin films deposited by e-beam evaporation technique

摘要

Five compositions of Ge_(14)Se_(86-x)Tl_x (x=20%, 22%, 23.5%, 26.8%, and 28%) are prepared using the melt-quenching technique. Thin films of thickness d=15, 30, 60, 90, 120, and 180 nm were deposited using electron-beam evaporation technique. All the films showed a non-Ohmic behavior. At higher range of ambient temperature, the activation energy △E_σ was studied as a function of the coordination number r, average number of constraints N_(cos)and heat of atomization H_s. Mott's parameters of the system Ge_(14)Se_(86-x)Tl_x were studied at lower range of temperature. The effect of annealing temperature T_(ann) on the activation energy was taken in consideration.