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机译:AC应力下多晶硅TFT退化的热分析
Department of Physics, National Sun Vat-sen University, Kaohsiung, Taiwan, ROC;
Department of Physics, National Sun Vat-sen University, Kaohsiung, Taiwan, ROC Institute of Electro-Optical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan, ROC Center for Nanoscience and Nanotechnology, HsinChu, Taiwan, ROC;
Department of Photonics & Display Institute, National Chiao Tung University, Hsin-Chu, 300, Taiwan, ROC;
Department of Physics, National Sun Vat-sen University, Kaohsiung, Taiwan, ROC;
Institute of Photonics Technologies, National Tsing Hua University, Hsin-Chu, 300, Taiwan, ROC;
Electronics Engineering, National Chiao Tung University, Hsin-Chu, 300, Taiwan, ROC;
Department of Physics, National Sun Vat-sen University, Kaohsiung, Taiwan, ROC;
Department of Mechanical & Electro-Mechanical Egineering National Sun Yat-sen University, Kaohsiung, Taiwan, ROC;
TFT; AC; dymanic stress; LTPS; poly-si;
机译:交流应力的时序对低温多晶硅TFT中陷阱状态产生的器件性能的影响
机译:交流应力下N沟道多晶硅TFT的电降解
机译:偏置应力对多晶硅TFT的影响
机译:通过C-V测量在交流应力下N沟道多晶硅TFT的电降解
机译:铟镓锌氧化物TFT的热应力降解研究
机译:热应激共生体的转录组学分析揭示了应激和代谢基因的差异表达。
机译:四端聚-SI TFT对DC和AC热载体降解抑制机制的TCAD分析