Bulk-quantity synthesis and electrical properties of SnO_2 nanowires prepared by pulsed delivery

摘要

Tin dioxide nanowires have been realized via pulsed laser deposition techniques based on a sintered cassiterite SnO_2 target, being deposited on Si (100) substrates at room temperature. X-ray diffraction indicated that the nanowires show the tetragonal rutile structure in the form of SnO_2. Transmission electron microscopy revealed that the nanowires are structurally perfect and uniform, and diameters range from 10 nm to 30 nm, and lengths of several hundreds nanometers to a few micrometers. Selected area electron diffraction and high-resolution transmission electron microscopy verified that the nanowires grow along the [110] growth direction. Electric properties were investigated by connecting a single SnO_2 nanowire in field-effect transistor configuration. The SnO_2 nanowires based on field-effect transistor devices exhibited that the SnO_2 nanowires prepared by our method hold better electrical properties.