Bulk-quantity synthesis of uitralong SnO_2 nanowires and their application to a hackgated triode emission device

摘要

A high yield of uitralong SnO_2 nanowires is successfully achieved by a simple thermal evaporation of SnO powders under air ambient. The as-synthesized SnO_2 nanobelts are single crystals with rutile structure. A backgated triode device for high-current applications has been developed with beltlike SnO_2 field emitters. The devices have confirmed triode operation with low turn-on gate voltage (about 170 V) and stable electron emission with brightness of 30 cd/m~2.