Synthesis and electrical and magnetic properties of Mn-doped SnO_2 nanowires

摘要

Diluted magnetic semiconductor Sn_(0.98)Mn_(0.02)O_2 nanowires were fabricated using catalyst assisted chemical vapor deposition. Field-effect transistor based on an individual nanowire was fabricated, and the electrical properties were measured. The resistivity, conduction electron density, and the mobility of Sn_(0.98)Mn_(0.02)O_2 nanowire were estimated to be 0.7 Ω cm, 5.17×10~(18)cm~(-3), and 12.8 cm~2/Vs, respectively. Magnetic measurements reveal that sample exhibits room temperature ferromagnetism (RTFM), which should be an intrinsic characteristic. The origin of RTFM can be interpreted in terms of the band coupling model.