Formation of nanodots and nanostripes of carbon nitride on silicon by plasma and thermal treatments

摘要

Amorphous carbon nitride (a-CN) films on Si(100) were grown by plasma-enhanced chemical vapor deposition at room temperature, followed by H_2 plasma and thermal annealing treatments, which produced densely and uniformly distributed nanodot- and nanostripe-like structures. The as-grown CN films showed two weak emission peaks at 2.1 and 2.4 eV, but the a-CN nanostructures showed a strong peak at 2.2 eV.