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机译:氮掺杂,锂掺杂和氮锂共掺杂的Zn_(0.11)Mg_(0.89)O薄膜的p型行为
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China;
机译:掺锂的Zn_(0.9)Mg_(0.1)薄膜的p型行为
机译:激光辅助分子束外延在高温退火自缓冲层上生长的Mg_(0.11)Zn_(0.89)O合金膜中激子的复合动力学
机译:氮掺杂的P型Znse,P型Zns_yse_(1-y)和P型Zn_(1-x)mg_xs_yse_(1-y)外延受体的激子和给体-受体对的活化能Gaas(1 0 0)衬底上生长的薄膜
机译:对n掺杂Zn_(0.925)Mg_(0.075)O薄膜的光学性质的研究
机译:磷掺杂的n型和氢掺杂的p型CVD金刚石薄膜的光电研究。
机译:氮掺杂制备P型铌酸锂薄膜
机译:钌掺杂对输运行为和超导体的影响 NdFeasO0.89F0.11的转变温度
机译:分子氮中脉冲激光烧蚀制备高掺杂p型ZnTe薄膜