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机译:p-Si / n-ZnO纳米棒阵列异质结增强的紫外电致发光
Department of Electronics, Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, People's Republic of China;
Department of Electronics, Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, People's Republic of China;
Department of Electronics, Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, People's Republic of China;
Department of Electronics, Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, People's Republic of China;
Department of Electronics, Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, People's Republic of China;
机译:金纳米粒子对表面等离子体增强的p-Si / n-ZnO纳米棒异质结光电探测器的退火作用
机译:Au介导的表面等离子体增强p-Si / n-ZnO纳米棒光电探测器的紫外线响应。
机译:具有n-ZnO纳米棒/ p-GaN直接键合异质结结构的ZnO基发光二极管的近紫外电致发光
机译:n-ZnO-SiO_2-ZnO纳米复合材料/ p-GaN异质结LED的结构和紫外电致发光
机译:深度紫外线阵列LED电致发光的温度依赖性和电流 - 电压特性
机译:通过优化MgO层间厚度从ZnO量子点基/ GaN异质结二极管中装饰银的局部表面等离子体增强紫外电致发光
机译:氧化锌纳米峰阵列异质结发光二极管的电致发光性能