首页> 外国专利> MANUFACTURING METHOD OF ZINC OXIDE NANOROD ARRAYS AND NANOROD ARRAYS MADE BY THE SAME AND SEMICONDUCTOR DEVICE USING THE SAME

MANUFACTURING METHOD OF ZINC OXIDE NANOROD ARRAYS AND NANOROD ARRAYS MADE BY THE SAME AND SEMICONDUCTOR DEVICE USING THE SAME

机译:氧化锌纳米晶阵列的制造方法及由其制造的纳米晶阵列和半导体器件

摘要

Disclosed are a method of manufacturing zinc oxide nanorod arrays grown in a certain pattern in a predetermined region of a nitride semiconductor, and zinc oxide nanorod arrays manufactured by the same. The method includes: preparing a growth substrate having a first surface and a second surface; growing a nitride semiconductor layer on the first surface of the growth substrate; placing a support substrate on the nitride semiconductor layer; forming a mask pattern on the second surface of the growth substrate; and removing the growth substrate from the nitride semiconductor layer by providing a laser beam through the second surface of the growth substrate having the mask pattern.
机译:公开了一种制造在氮化物半导体的预定区域中以特定图案生长的氧化锌纳米棒阵列的方法,以及由其制造的氧化锌纳米棒阵列。该方法包括:准备具有第一表面和第二表面的生长衬底;在生长衬底的第一表面上生长氮化物半导体层;将支撑衬底放置在氮化物半导体层上;在生长衬底的第二表面上形成掩模图案;通过提供穿过具有掩模图案的生长衬底的第二表面的激光束,从氮化物半导体层去除生长衬底。

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