机译:GaSb衬底上分子束外延生长的As / In As_(1-x)Sb_xⅡ型超晶格应变平衡
Center for Photonics Innovation and School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287;
California NanoSy'stems Institute, University of California, Los Angeles, California 90095;
Department of Physics, Arizona State University, Tempe, Arizona 85287;
Air Force Research Lab, Materials & Manufacturing Directorate, Wright Patterson AFB, Ohio 45433-7707;
California NanoSystems Institute, University of California, Los Angeles, California 90095;
Department of Physics and Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287;
Center for Photonics Innovation and School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287;
机译:在金属有机化学气相沉积生长的GaSb衬底上演示长波长红外Ⅱ型InAs / lnAs_(1-x)Sb_x超晶格光电二极管
机译:衬底温度对分子束外延生长应变平衡InAs / InAsSbⅡ型超晶格的结构和光学性质的影响
机译:分子束外延生长InAs / InAs_(1-x)Sb_xⅡ型超晶格中锑偏析的评估
机译:分子束外延生长InAs / GaSbⅡ型超晶格的界面设计和性能
机译:砷化镓/铝(x)-砷化镓(1-x)量子阱激光器通过分子束外延生长在砷化镓和硅上。
机译:GaAs衬底上分子束外延生长的中波和长波InAs / GaSb超晶格的电学性质
机译:在Gasb衬底上通过分子束外延生长的应变平衡Inas_Inas1-xsbx II型超晶格