Nitrided thermal SiO_2 for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal-oxide-semiconductor field effect transistor

摘要

Nitrided thermal oxide was used to reduce the degradation of top and bottom gate insulators of self-aligned double gate metal-oxide-semiconductor field effect transistors that use a form of selective epitaxial growth of silicon (SEG) called tunnel epitaxy. The degradation of thermal oxide was due to the exposure of gate insulator to the epi-growth ambient gases during the epitaxial growth.