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Method on surface roughness modification to alleviate stiction of microstructures

机译:减轻微观结构静摩擦的表面粗糙度改性方法

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摘要

Modification on surface roughness has been shown to effectively alleviate both release and in-use stiction in the previous literature. However, the modified materials in the previously reported methods were limited to polysilicon or single crystalline silicon with special properties. Here, the proposed modification method not only can apply to silicon without extra property requirements, but also has the potential to modify other materials, such as oxide, nitride, and some metals. The process here combines spin-on photoresist and reactive ion etching. The proposed low temperature process is simple, and no extra mask is needed. Consequently, there is more flexibility to add the roughness modification to the original fabrication process of microdevices. In this study, polysilicon and silicon nitride are demonstrated as the modified materials. Antistiction effects are characterized by calibrating the water contact angles on the modified surfaces and the detachment lengths of released cantilevers. The experimental results show that the detachment length is almost two times longer than the cantilevers without modified substrates, where the interfacial surface energy between solids is reduced about 15 times.
机译:在先前的文献中,表面粗糙度的改变已显示出可有效减轻释放和使用中的粘滞现象。但是,以前报道的方法中的改性材料仅限于具有特殊性能的多晶硅或单晶硅。在此,所提出的改性方法不仅可以应用于硅,而无需额外的性能要求,而且具有改性其他材料的潜力,例如氧化物,氮化物和某些金属。这里的工艺结合了旋涂光刻胶和反应离子刻蚀。所提出的低温工艺很简单,不需要额外的掩模。因此,有更大的灵活性将粗糙度修改添加到微器件的原始制造过程中。在这项研究中,多晶硅和氮化硅被证明是改性材料。防粘效果的特点是校准改性表面上的水接触角和释放的悬臂的分离长度。实验结果表明,分离长度几乎是未改性底材的悬臂的两倍,悬臂的固体之间的界面能降低了约15倍。

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