Influence of hydrogen plasma treatment on boron implanted junctions in silicon

摘要

Alleviation of transient enhanced diffusion (TED) is a critical issue in realizing deep submicron complementary metal-oxide-semiconductor transistors. In this article we present the influence of hydrogen plasma on TED of boron, along with deep level transient spectroscopic (DLTS) studies on defect evolution as a function of anneal temperature. The studies reveal that TED monotonically increases as a function of anneal temperature up to 650℃, where maximum TED occurs. A further increase in anneal temperature reveals TED reduction. The DLTS shows a corresponding increase in defect density up to 650℃ and then decreases when annealed at 850℃ for the same amount of time.