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Method to form relaxed SiGe layer with high Ge content using co-implantation of silicon with boron or helium and hydrogen
Method to form relaxed SiGe layer with high Ge content using co-implantation of silicon with boron or helium and hydrogen
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机译:硅与硼,氦,氢共注入形成高Ge含量弛豫SiGe层的方法
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摘要
A method of forming a relaxed SiGe layer having a high germanium content in a semiconductor device includes preparing a silicon substrate; depositing a strained SiGe layer; implanting ions into the strained SiGe layer, wherein the ions include silicon ions and ions selected from the group of ions consisting of boron and helium, and which further includes implanting H+ ions; annealing to relax the strained SiGe layer, thereby forming a first relaxed SiGe layer; and completing the semiconductor device.
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