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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Nanoscopic templates using self-assembled cylindrical diblock copolymers for patterned media
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Nanoscopic templates using self-assembled cylindrical diblock copolymers for patterned media

机译:使用自组装圆柱形二嵌段共聚物作为图案介质的纳米模板

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摘要

We demonstrated a process to create nanoscopic templates for the nanofabrication of patterned media using thin films of diblock copolymers. The self-assembled monolayers (SAMs) technique is used as a means to chemically modify the topographically confined trench surfaces t6 manipulate the wetting behavior of cylindrical diblock copolymers and perpendicularly oriented cylindrical poly (styrene-block-methyl methacrylate) (PS-b-PMMA) copolymers are obtained. Through optimizing the annealing conditions, long-range ordering in trenches is achieved after annealing at 170℃ for about 24 h. The ordering is strongly dependent on the line-edge-roughness (LER) of the trenches and the number of defects in the copolymer films inside the trenches. Efforts to decrease the various defects in the copolymer films and improve the trench LER are still in progress. With our approach, a negative phase 20 nm nanoporous SiO_2 template and a positive phase 20 nm Ta nanodot template based on the self-assembled cylindrical PS-b-PMMA block copolymers are feasible for following pattern transfer to make patterned media.
机译:我们展示了一种使用二嵌段共聚物薄膜为图案化介质的纳米加工创建纳米模板的过程。自组装单分子层(SAMs)技术用作化学修饰地形受限沟槽表面的手段t6控制圆柱形二嵌段共聚物和垂直取向的圆柱形聚(苯乙烯-嵌段-甲基丙烯酸甲酯)(PS-b-PMMA)的润湿行为获得共聚物。通过优化退火条件,在170℃退火约24 h后,可实现沟槽的长程有序化。该顺序强烈地取决于沟槽的线边缘粗糙度(LER)和沟槽内部的共聚物膜中的缺陷数量。减少共聚物膜中的各种缺陷并改善沟槽LER的努力仍在进行中。利用我们的方法,基于自组装圆柱PS-b-PMMA嵌段共聚物的20 nm纳米多孔SiO_2负相模板和20 nm Ta纳米正相模板可用于后续的图案转移以制作图案化介质。

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