首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Self-organized nanodot formation on InP(100) by argon ion sputtering at normal incidence
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Self-organized nanodot formation on InP(100) by argon ion sputtering at normal incidence

机译:垂直入射时通过氩离子溅射在InP(100)上自组织形成纳米点

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摘要

We demonstrate the formation of hexagonal nanodot arrays with mean dot diameter and periodicity of (73 +/- 10) and 85 nm, respectively, by 1 keV At+ beam sputtering of InP(100) at normal incidence. The ordering of nanodots increases with sputtering duration and ion flux. Ordered hexagonal nanodot arrays form at a small temperature window near room temperature. X-ray photoelectron spectroscopy and backscattered electron composition imaging (COMPO) show that the surface of nanodots comprises primarily of elemental In due to the preferential sputtering of P. Based on scaling theory, the temporal evolution of the sputtered surface can be divided into two different regimes: coarsening in the early-time regime and ordering in the late-time regime. (c) 2006 American Vacuum Society.
机译:我们通过正入射的1 keV At +溅射InP(100)演示了六边形纳米点阵列的形成,平均点直径和周期性分别为(73 +/- 10)和85 nm。纳米点的顺序随着溅射持续时间和离子通量的增加而增加。有序的六角形纳米点阵列在接近室温的小温度窗口内形成。 X射线光电子能谱和反向散射电子组成成像(COMPO)表明,由于P的优先溅射,纳米点的表面主要包含元素In。基于定标理论,溅射表面的时间演化可分为两个不同的体制:在早期体制中粗化,在后期体制中有序。 (c)2006年美国真空学会。

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