In situ x-ray scattering study of self-organized nanodot pattern formation on GaSb(001) by ion beam sputtering

摘要

The formation of self-organized nanodot patterns on GaSb(001) targets by ion beam sputtering has been studied in situ with grazing incidence small angle x-ray scattering. The temporal evolution of the patterns at different ion energies (300-1200 eV) has been monitored. The authors evidence a rapid coarsening in the characteristic wavelength until reaching a saturation value that scales with ion energy. The pattern evolves slower toward saturation for the lower ion energy while attaining a higher correlation length (normalized to the wavelength). The pattern time dependence is correlated with the influence of the sputtering rate on the pattern formation.