EXPERIMENTAL INVESTIGATION OF MILLISECOND-PULSE LASER HEATING OF BIASED Si AVALANCHE PHOTODIODES IN AN EXTERNAL CIRCUIT

摘要

We investigate increase in the surface temperature of biased Si avalanche photodiodes (APDs) fabricated in an external capacitor circuit irradiated by a millisecond-pulse laser. The results obtained show that different external capacitance parameters have different effects on the temperature rise, the smaller the capacitance of external capacitor, the lower surface temperature increase in the APD. The reason for this phenomenon is that the external capacitor charging decreases the circuit current, which hinders the generation of Joule heat in the APD. Therefore, the laser damage resistance of Si APDs can be improved by optimizing the capacitance parameters of the external circuit.